Številka dela D2013UK Kategorije RF MOSFET Transistors RoHS Podatkovni list D2013UK Opis RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-1GHz SE
Kategorije RF MOSFET Transistors Configuration Dual Gain 10 dB Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 20 W Package / Case DK Pd - Power Dissipation 83 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V