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- RF MOSFET Transistors
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- RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
D2012UK
Slike so samo za referenco
Specifikacije
- Kategorije
- RF MOSFET Transistors
- Channel Mode
- Enhancement
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 4 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 10 W
- Package / Case
- DP
- Pd - Power Dissipation
- 42 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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20,391 Izdelki
Najnovejše ocene
everything as it is written in the description of the same deductible prodovtsu deserved
Aleksov
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
D2012UK Novice
03/14/2023
03/13/2023
03/13/2023
Sorodne ključne besede za D201
- D2012UK Integrirano
- D2012UK RoHS
- D2012UK PDF Datasheet
- D2012UK Podatkovni list
- D2012UK Del 1. \ T
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- D2012UK Distributer
- D2012UK PDF
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- D2012UK IC
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- D2012UK Tehnični podatki
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