D2010UK

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Specifikacije

Kategorije
RF MOSFET Transistors
Configuration
Single
Gain
10 dB
Height
5.08 mm
Id - Continuous Drain Current
8 A
Length
18.92 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
20 W
Package / Case
DP
Pd - Power Dissipation
8.3 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
6.35 mm

Najnovejše ocene

Quickly came to CET, all in one package. Look at the rules

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

it is safe and sound all, thank you seller!

Hello! Order received, very happy. Thank you very much!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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