Številka dela D2010UK Kategorije RF MOSFET Transistors RoHS Podatkovni list D2010UK Opis RF MOSFET Transistors RF MOSFET
Kategorije RF MOSFET Transistors Configuration Single Gain 10 dB Height 5.08 mm Id - Continuous Drain Current 8 A Length 18.92 mm Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 20 W Package / Case DP Pd - Power Dissipation 8.3 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V Width 6.35 mm