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- RF MOSFET Transistors
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- RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
D2012UK
Slike so samo za referenco
Specifikacije
- Kategorije
- RF MOSFET Transistors
- Channel Mode
- Enhancement
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 4 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 10 W
- Package / Case
- DP
- Pd - Power Dissipation
- 42 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
Kategorija pordukta
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278,174 Izdelki
Semiconductors
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61,386 Izdelki
Test & Measurement
20,391 Izdelki
Najnovejše ocene
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Hello! Order received, very happy. Thank you very much!
Flavia
Thank You all fine, packed very well
Ulrich Bundke
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
D2012UK Novice
03/14/2023
03/13/2023
03/13/2023
Sorodne ključne besede za D201
- D2012UK Integrirano
- D2012UK RoHS
- D2012UK PDF Datasheet
- D2012UK Podatkovni list
- D2012UK Del 1. \ T
- D2012UK Nakup
- D2012UK Distributer
- D2012UK PDF
- D2012UK Komponenta
- D2012UK IC
- D2012UK Prenesite PDF
- D2012UK Prenesite podatkovni list
- D2012UK Dobava
- D2012UK Dobavitelj
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- D2012UK Slika
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- D2012UK Inventar
- D2012UK Zaloga
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- D2012UK Brez svinca
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- D2012UK Vroče ponudbe
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- D2012UK Tehnični podatki
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