D2016UK

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Specifikacije

Kategorije
RF MOSFET Transistors
Configuration
Dual
Gain
10 dB
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
30 W
Package / Case
DK
Pd - Power Dissipation
117 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V

Najnovejše ocene

Thanks for your feedback!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

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