Številka dela 2SA2071T100Q Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA2071T100Q Opis Bipolar Transistors - BJT TRANSISTOR 60V3A PNP CPT3;HI VLT DISCHRG
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Configuration Single Continuous Collector Current - 3 A DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 120 at 100 mA, 2 V Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 180 MHz Height 1.5 mm Length 4.5 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case MPT-3 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 2000 mW Product Type BJTs - Bipolar Transistors Series 2SA2071 Technology SI Transistor Polarity PNP Width 2.5 mm