2SA2012-TD-E

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Specifikacije

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 30 V
Collector- Emitter Voltage VCEO Max
- 30 V
Collector-Emitter Saturation Voltage
- 140 mV
Configuration
Single
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
560
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
350 MHz
Maximum DC Collector Current
- 5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.5 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2012
Technology
SI
Transistor Polarity
PNP
Unit Weight

Najnovejše ocene

My package arrived wet, not know where occurs this fact, but working all right

it is safe and sound all, thank you seller!

fast delivery

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Good material. Great seller, efficient and insurance. Ok

Sorodne ključne besede za 2SA2

  • 2SA2012-TD-E Integrirano
  • 2SA2012-TD-E RoHS
  • 2SA2012-TD-E PDF Datasheet
  • 2SA2012-TD-E Podatkovni list
  • 2SA2012-TD-E Del 1. \ T
  • 2SA2012-TD-E Nakup
  • 2SA2012-TD-E Distributer
  • 2SA2012-TD-E PDF
  • 2SA2012-TD-E Komponenta
  • 2SA2012-TD-E IC
  • 2SA2012-TD-E Prenesite PDF
  • 2SA2012-TD-E Prenesite podatkovni list
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  • 2SA2012-TD-E Dobavitelj
  • 2SA2012-TD-E Cena
  • 2SA2012-TD-E Podatkovni list
  • 2SA2012-TD-E Slika
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  • 2SA2012-TD-E Inventar
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  • 2SA2012-TD-E Specifikacija
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