BS170-D75Z

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Številka dela
BS170-D75Z
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET N-Ch Enhancement Mode Field Effect

Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Forward Transconductance - Min
0.32 S
Height
5.33 mm
Id - Continuous Drain Current
500 mA
Length
5.2 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Ammo Pack
Part # Aliases
Pd - Power Dissipation
830 mW
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
1.2 Ohms
Series
BS170
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Najnovejše ocene

Thanks for your feedback!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Good material. Great seller, efficient and insurance. Ok

Sorodne ključne besede za BS17

  • BS170-D75Z Integrirano
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  • BS170-D75Z PDF Datasheet
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