Številka dela BS170-D27Z Kategorije MOSFET RoHS Podatkovni list BS170-D27Z Opis MOSFET N-Ch Enhancement Mode Field Effect
Kategorije MOSFET Channel Mode Enhancement Configuration Single Forward Transconductance - Min 0.32 S Height 5.33 mm Id - Continuous Drain Current 500 mA Length 5.2 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Cut Tape Packaging Reel Part # Aliases Pd - Power Dissipation 830 mW Product MOSFET Small Signal Product Type MOSFET Rds On - Drain-Source Resistance 1.2 Ohms Series BS170 Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type FET Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Width 4.19 mm