Številka dela 2SA2153-TD-E Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA2153-TD-E Opis Bipolar Transistors - BJT BIP PNP 2A 50V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.2 V Configuration Single DC Collector/Base Gain hfe Min 200 at - 100 mA, - 2 V DC Current Gain hFE Max 560 at - 100 mA, - 2 V Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 420 MHz Maximum DC Collector Current - 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PCP-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.5 W Product Type BJTs - Bipolar Transistors Series 2SA2153 Technology SI Transistor Polarity PNP Unit Weight