Številka dela 2SA2202-TD-E Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA2202-TD-E Opis Bipolar Transistors - BJT BIP PNP 2A 100V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 100 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 0.12 V Configuration Single Continuous Collector Current - 2 A DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 7 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current - 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.3 W Product Type BJTs - Bipolar Transistors Series 2SA2202 Technology SI Transistor Polarity PNP