GA04JT17-247

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Številka dela
GA04JT17-247
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A

Specifikacije

Kategorije
MOSFET
Configuration
Single
Fall Time
50 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
91 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
480 mOhms
Rise Time
28 ns
Series
GA04
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
73 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
1.7 kV

Najnovejše ocene

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

Works. Recommend

Long Service and Russia!

Seems well have not tested

Sorodne ključne besede za GA04

  • GA04JT17-247 Integrirano
  • GA04JT17-247 RoHS
  • GA04JT17-247 PDF Datasheet
  • GA04JT17-247 Podatkovni list
  • GA04JT17-247 Del 1. \ T
  • GA04JT17-247 Nakup
  • GA04JT17-247 Distributer
  • GA04JT17-247 PDF
  • GA04JT17-247 Komponenta
  • GA04JT17-247 IC
  • GA04JT17-247 Prenesite PDF
  • GA04JT17-247 Prenesite podatkovni list
  • GA04JT17-247 Dobava
  • GA04JT17-247 Dobavitelj
  • GA04JT17-247 Cena
  • GA04JT17-247 Podatkovni list
  • GA04JT17-247 Slika
  • GA04JT17-247 Slika
  • GA04JT17-247 Inventar
  • GA04JT17-247 Zaloga
  • GA04JT17-247 Izvirnik
  • GA04JT17-247 Najcenejši
  • GA04JT17-247 Odlično
  • GA04JT17-247 Brez svinca
  • GA04JT17-247 Specifikacija
  • GA04JT17-247 Vroče ponudbe
  • GA04JT17-247 Cena prekinitve
  • GA04JT17-247 Tehnični podatki