Številka dela GA04JT17-247 Kategorije MOSFET RoHS Podatkovni list GA04JT17-247 Opis MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A
Kategorije MOSFET Configuration Single Fall Time 50 ns Id - Continuous Drain Current 15 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 91 W Product Type MOSFET Rds On - Drain-Source Resistance 480 mOhms Rise Time 28 ns Series GA04 Technology SiC Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 73 ns Typical Turn-On Delay Time 30 ns Unit Weight Vds - Drain-Source Breakdown Voltage 1.7 kV