Številka dela DN2530N3-G P013 Kategorije MOSFET RoHS Podatkovni list DN2530N3-G P013 Opis MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92
Kategorije MOSFET Channel Mode Depletion Configuration Single Fall Time 20 ns Height 5.33 mm Id - Continuous Drain Current 175 mA Length 5.21 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 740 mW Product MOSFET Small Signal Product Type MOSFET Rds On - Drain-Source Resistance 12 Ohms Rise Time 15 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 300 V Vgs - Gate-Source Voltage 20 V Width 4.19 mm