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R8010ANX

R8010ANX
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Številka dela
R8010ANX
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 10V Drive Nch MOSFET
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
2.2 S
Height
4.8 mm
Id - Continuous Drain Current
10 A
Length
15.4 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
40 W
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
62 nC
Rds On - Drain-Source Resistance
560 mOhms
Rise Time
54 ns
Series
R8010ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Power MOSFET
Typical Turn-Off Delay Time
97 ns
Typical Turn-On Delay Time
43 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
10.3 mm

Kategorija pordukta

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Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
Good material. Great seller, efficient and insurance. Ok
Received very good
and whole all right. the features no more функционалу check.
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R8010ANX
R8010ANX
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R8010ANX
R8010ANX
Priljubljeno Za Boma

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Sorodne ključne besede za R801

  • R8010ANX Integrirano
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  • R8010ANX PDF Datasheet
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