R8008ANX

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Številka dela
R8008ANX
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 10V Drive Nch MOSFET

Specifikacije

Kategorije
MOSFET
Configuration
Single
Fall Time
30 ns
Id - Continuous Drain Current
8 A
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
39 nC
Rds On - Drain-Source Resistance
1.03 Ohms
Rise Time
50 ns
Series
R8008ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
32 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V

Najnovejše ocene

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

Great product. Arrived ahead of time. Thank you

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