SI1016X-T1-GE3

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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Forward Transconductance - Min
0.4 S, 1 S
Id - Continuous Drain Current
400 mA, 600 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-563-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
280 mW, 280 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC, 1500 pC
Rds On - Drain-Source Resistance
750 mOhms, 1.2 Ohms
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
25 ns, 35 ns
Typical Turn-On Delay Time
5 ns, 5 ns
Unit Weight
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV

Najnovejše ocene

My package arrived wet, not know where occurs this fact, but working all right

all exactly and work. радиолюбителя useful set to, thank you)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Works. Find the price of this product is very good

Shipping a little 1 weeks, normal packing, the procedure is complete.

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