RQ3E120GNTB

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RQ3E120GNTB
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 4.5V Drive Nch MOSFET

Specifikacije

Kategorije
MOSFET
Configuration
Single
Fall Time
3.4 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Rds On - Drain-Source Resistance
8.8 mOhms
Rise Time
4.5 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25.5 ns
Typical Turn-On Delay Time
9.6 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Najnovejše ocene

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Sorodne ključne besede za RQ3E

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