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SI1016CX-T1-GE3

SI1016CX-T1-GE3
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SI1016CX-T1-GE3
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 11 ns
Forward Transconductance - Min
1 S, 2 S
Id - Continuous Drain Current
350 mA, 500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-89-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
220 mW
Product Type
MOSFET
Qg - Gate Charge
1.3 nC, 1.65 nC
Rds On - Drain-Source Resistance
396 mOhms, 756 mOhms
Rise Time
10 ns, 16 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
10 ns, 26 ns
Typical Turn-On Delay Time
9 ns, 11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
400 mV

Kategorija pordukta

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Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
packed pretty good, all is ok,-seller.
Goods came in two weeks. Well packed. Track number tracked
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
the photo in comparison with cheap. Delivery fast
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Osebe, ki so si ogledale SI1016CX-T1-GE3, so nato kupile

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