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RQ3E100ATTB

RQ3E100ATTB
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Številka dela
RQ3E100ATTB
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET PCH -30V -31A POWER
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
50 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
17 W
Product Type
MOSFET
Qg - Gate Charge
42 nC
Rds On - Drain-Source Resistance
11.4 mOhms
Rise Time
14 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
12 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Kategorija pordukta

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all exactly and work. радиолюбителя useful set to, thank you)
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
the photo in comparison with cheap. Delivery fast
Več

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Sorodne ključne besede za RQ3E

  • RQ3E100ATTB Integrirano
  • RQ3E100ATTB RoHS
  • RQ3E100ATTB PDF Datasheet
  • RQ3E100ATTB Podatkovni list
  • RQ3E100ATTB Del 1. \ T
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  • RQ3E100ATTB Distributer
  • RQ3E100ATTB PDF
  • RQ3E100ATTB Komponenta
  • RQ3E100ATTB IC
  • RQ3E100ATTB Prenesite PDF
  • RQ3E100ATTB Prenesite podatkovni list
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  • RQ3E100ATTB Tehnični podatki

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