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SI1012R-T1-GE3

SI1012R-T1-GE3
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Številka dela
SI1012R-T1-GE3
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.575 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-75A-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
175 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.76 mm

Kategorija pordukta

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Sorodne ključne besede za SI10

  • SI1012R-T1-GE3 Integrirano
  • SI1012R-T1-GE3 RoHS
  • SI1012R-T1-GE3 PDF Datasheet
  • SI1012R-T1-GE3 Podatkovni list
  • SI1012R-T1-GE3 Del 1. \ T
  • SI1012R-T1-GE3 Nakup
  • SI1012R-T1-GE3 Distributer
  • SI1012R-T1-GE3 PDF
  • SI1012R-T1-GE3 Komponenta
  • SI1012R-T1-GE3 IC
  • SI1012R-T1-GE3 Prenesite PDF
  • SI1012R-T1-GE3 Prenesite podatkovni list
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  • SI1012R-T1-GE3 Specifikacija
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  • SI1012R-T1-GE3 Tehnični podatki

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