J175

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Številka dela
J175
Kategorije
JFET
RoHS
Podatkovni list
Opis
JFET JFET P-Channel -30V 50mA 360mW 3.27mW

Specifikacije

Kategorije
JFET
Configuration
Single
Drain-Source Current at Vgs=0
- 70 mA
Gate-Source Cutoff Voltage
6 V
Id - Continuous Drain Current
- 10 nA
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
360 mW
Rds On - Drain-Source Resistance
85 Ohms
Series
J175
Technology
SI
Transistor Polarity
P-Channel
Type
JFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
- 15 V
Vgs - Gate-Source Breakdown Voltage
30 V

Najnovejše ocene

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

and whole all right. the features no more функционалу check.

to seller thank you! all like the photo. not tried operation. seller store recommend.

Excellent transaction five star service thank you, we will do business again.

No problem, with no contact, selectively checked a few pieces, such as running

Osebe, ki so si ogledale J175, so nato kupile

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