Številka dela 2SA1416S-TD-E Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA1416S-TD-E Opis Bipolar Transistors - BJT BIP PNP 1A 100V
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 0.2 V Configuration Single Continuous Collector Current - 1 A DC Collector/Base Gain hfe Min 140 DC Current Gain hFE Max 280 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 2 A Mounting Style SMD/SMT Package / Case PCP-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.3 W Product Type BJTs - Bipolar Transistors Series 2SA1416 Technology SI Transistor Polarity PNP Unit Weight