2SA1962OTU

Slike so samo za referenco

Specifikacije

Kategorije
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 250 V
Collector- Emitter Voltage VCEO Max
- 250 V
Collector-Emitter Saturation Voltage
- 400 mV
Configuration
Single
Continuous Collector Current
15 A
DC Collector/Base Gain hfe Min
80 at 1 A, 5 V
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
30 MHz
Height
19.9 mm
Length
15.6 mm
Maximum DC Collector Current
- 17 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-3P-3
Packaging
Tube
Pd - Power Dissipation
130000 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1962
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
4.8 mm

Najnovejše ocene

My package arrived wet, not know where occurs this fact, but working all right

it is safe and sound all, thank you seller!

fast delivery

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Good material. Great seller, efficient and insurance. Ok

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