Številka dela VT6Z2T2R Kategorije Bipolar Transistors - BJT RoHS Podatkovni list VT6Z2T2R Opis Bipolar Transistors - BJT TRANS GP BJT NPN PNP 50V 0.1A 6PIN
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.1 V, - 0.15 V Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 560 at - 1 mA, - 6 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 350 MHz, 300 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 150 mW Product Type BJTs - Bipolar Transistors Series VT6Z2 Technology SI Transistor Polarity NPN, PNP