Številka dela DP0150BLP4-7B Kategorije Bipolar Transistors - BJT RoHS Podatkovni list DP0150BLP4-7B Opis Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 300 mV Configuration Single Continuous Collector Current - 100 mA DC Collector/Base Gain hfe Min 200 at - 2 mA, - 6 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case DFN1006H4-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 450 mW Product Type BJTs - Bipolar Transistors Series DP0150 Technology SI Transistor Polarity PNP