Številka dela 2SA1416T-TD-E Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA1416T-TD-E Opis Bipolar Transistors - BJT BIP PNP 1A 100V
Kategorije Bipolar Transistors - BJT Collector- Emitter Voltage VCEO Max - 100 V Configuration Single Continuous Collector Current 1 A Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 120 MHz Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case PCP-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Series 2SA1416 Technology SI Transistor Polarity PNP Unit Weight