Številka dela DU28120T Kategorije RF MOSFET Transistors RoHS Podatkovni list DU28120T Opis RF MOSFET Transistors 2.175MHz 120W MOSFET
Kategorije RF MOSFET Transistors Forward Transconductance - Min 3 s Gain 13 dB Id - Continuous Drain Current 24 A Maximum Operating Temperature + 200 C Mounting Style SMD/SMT Number of Channels 1 Channel Operating Frequency 2 MHz to 175 MHz Output Power 120 W Pd - Power Dissipation 269 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V