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RM100N30DF

RM100N30DF
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Številka dela
RM100N30DF
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET DFN MOSFET
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
39 ns
Forward Transconductance - Min
32 s
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
DFN-8
Packaging
Reel
Pd - Power Dissipation
65 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
2.5 mOhms
Rise Time
24 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
91 ns
Typical Turn-On Delay Time
26 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

Kategorija pordukta

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My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Seems well have not tested
I received the product right, thank you very much 2018/12/03 ★★★★★
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Sorodne ključne besede za RM10

  • RM100N30DF Integrirano
  • RM100N30DF RoHS
  • RM100N30DF PDF Datasheet
  • RM100N30DF Podatkovni list
  • RM100N30DF Del 1. \ T
  • RM100N30DF Nakup
  • RM100N30DF Distributer
  • RM100N30DF PDF
  • RM100N30DF Komponenta
  • RM100N30DF IC
  • RM100N30DF Prenesite PDF
  • RM100N30DF Prenesite podatkovni list
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  • RM100N30DF Tehnični podatki

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