RM100N60T2

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RM100N60T2
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET TO-251 MOSFET

Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13.6 ns
Forward Transconductance - Min
50 s
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
170 W
Product Type
MOSFET
Qg - Gate Charge
85 nC
Rds On - Drain-Source Resistance
6.5 mOhms
Rise Time
10.8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
16.8 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

Najnovejše ocene

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

packed pretty good, all is ok,-seller.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

The goods are OK, thank you dealers.

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