RQ3E100GNTB

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Številka dela
RQ3E100GNTB
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 4.5V Drive Nch MOSFET

Specifikacije

Kategorije
MOSFET
Configuration
Single
Fall Time
3.1 ns
Forward Transconductance - Min
8 s
Id - Continuous Drain Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
7.9 nC
Rds On - Drain-Source Resistance
11.7 mOhms
Rise Time
4.3 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
22.4 ns
Typical Turn-On Delay Time
8.4 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Najnovejše ocene

all exactly and work. радиолюбителя useful set to, thank you)

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Decent quality, not минвелл certainly, but enough decent

Goods came in two weeks. Well packed. Track number tracked

Fast shippng. Good quality. I recomend this seller.

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