Številka dela VT6M1T2CR Kategorije MOSFET RoHS Podatkovni list VT6M1T2CR Opis MOSFET 1.2V Drive Nch+Pch MOSFET
Kategorije MOSFET Channel Mode Enhancement Configuration Dual Fall Time 38 ns, 137 ns Id - Continuous Drain Current 100 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case VMT-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 150 mW Product Type MOSFET Rds On - Drain-Source Resistance 3.5 Ohms, 3.8 Ohms Rise Time 4 ns, 62 ns Series VT6M1 Technology SI Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel MOSFET, 1 P-Channel MOSFET Typical Turn-Off Delay Time 20 ns, 325 ns Typical Turn-On Delay Time 5 ns, 46 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 4.5 V Vgs th - Gate-Source Threshold Voltage 300 mV