TP0604N3-G

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Številka dela
TP0604N3-G
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 40V 2 Ohm

Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Forward Transconductance - Min
400 ms
Height
5.33 mm
Id - Continuous Drain Current
430 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
0.74 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
2 Ohms
Rise Time
7 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
4.19 mm

Najnovejše ocene

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Seems well have not tested

I received the product right, thank you very much 2018/12/03 ★★★★★

all is well. checked work. seller recommend.

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