Kategorije MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 100 ms Height 4.01 mm Id - Continuous Drain Current 120 mA Length 4.77 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 500 mW Product MOSFET Small Signal Product Type MOSFET Rds On - Drain-Source Resistance 30 Ohms Rise Time 8 ns Series BS107 Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type FET Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage 5 V Vgs th - Gate-Source Threshold Voltage 1 V Width 2.41 mm