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RQ6E080AJTCR

RQ6E080AJTCR
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Številka dela
RQ6E080AJTCR
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET NCH 30V 8A POWER
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Specifikacije

Kategorije
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
22 ns
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457T-6
Packaging
Cut Tape
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
16.2 nC
Rds On - Drain-Source Resistance
16.5 mOhms
Rise Time
16 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
65 ns
Typical Turn-On Delay Time
20 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
500 mV

Kategorija pordukta

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Teşekkürler
Received, Fast shipping, not checked yet
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
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  • RQ6E080AJTCR PDF Datasheet
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  • RQ6E080AJTCR PDF
  • RQ6E080AJTCR Komponenta
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