FZ900R12KE4

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Specifikacije

Kategorije
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
900 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
4300 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Najnovejše ocene

it is safe and sound all, thank you seller!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Everything is fine!

Parcel received shook cool all 10 pieces is not checked check unsubscribe

Well packed it for 1 weeks.

Osebe, ki so si ogledale FZ900R12KE4, so nato kupile

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