Številka dela 2SA1962RTU Kategorije Bipolar Transistors - BJT RoHS Podatkovni list 2SA1962RTU Opis Bipolar Transistors - BJT PNP Epitaxial Silicon
Kategorije Bipolar Transistors - BJT Collector- Base Voltage VCBO 230 V Collector- Emitter Voltage VCEO Max 230 V Configuration Single Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 55 at 1 A, 5 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 30 MHz Height 19.9 mm Length 15.6 mm Maximum DC Collector Current 17 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-3P-3 Packaging Tube Pd - Power Dissipation 130000 mW Product Type BJTs - Bipolar Transistors Series 2SA1962 Technology SI Transistor Polarity PNP Unit Weight Width 4.8 mm